通过观察和分析研究高、低两种脉冲激光功率密度条件下激光铣削的硬质合金的表面形貌和其铣削实验过程，发现脉冲激光铣削的材料去除......

Single crystal silicon carbide (SiC) is widely used for optoelectronics applications. Due to the anisotropic characteris......

Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization i......

为了分析磨削过程中单晶γ-TiAl合金的材料去除机制,建立了双磨粒磨削Ti-Al合金的分子动力学模型.揭示了金刚石磨粒的横向间距和纵......